产品图片 |
产品型号 |
描述 |
发布时间 |
购买 |
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SZMMBZ9V1ALT3G |
双通用阳极齐纳二极管 |
2020-07-17 |
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LM431SCCM32X |
2.5V,±0.5%容差,可调式分流稳压器 |
2020-07-17 |
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FDMA1032CZ |
20V互补功率Trench MOSFET |
2020-07-17 |
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S100 |
1A肖特基势垒整流器 |
2020-07-17 |
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DF08S |
1.5A桥式整流器 |
2020-07-17 |
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FAN7930CMX-G |
功率因数控制器(PFC),CrCM,PFC就绪信号 |
2020-07-17 |
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NVTFS5C478NLTAG |
40V,26A,14mΩ,单N沟道功率MOSFET |
2020-07-17 |
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J175-D26Z |
P通道开关 |
2020-07-17 |
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NTHL020N090SC1 |
900V,20mΩ,118A,N沟道碳化硅MOSFET |
2020-07-06 |
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FDMS86163P |
P沟道功率MOSFET,-100V,-50A,22mΩ |
2020-07-06 |
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SZMMSZ4679T1G |
2V低电流齐纳二极管稳压器 |
2020-07-06 |
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NCV8114ASN250T1G |
LDO稳压器,300mA,2.5V AD |
2020-07-06 |
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NTMFS5H431NLT1G |
40V,106A,3.3mΩ,单N沟道功率MOSFET |
2020-06-23 |
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NVTFS4C10NTAG |
30V,47A,7.4mΩ,单N沟道功率MOSFET |
2020-06-23 |
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ESD7462N2T5G |
超低电容ESD?;ざ?/td>
| 2020-06-10 |
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NRVUA220VT3G |
2A,150V超快恢复功率整流器 |
2020-06-10 |
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S1DFL |
200V,1A表面通用整流器 |
2020-06-10 |
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NCV78763DQ9R2G |
双LED驱动器和电源镇流器 |
2020-06-10 |
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BC858CMTF |
310mW,PNP外延硅晶体管 |
2020-05-28 |
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FDG8842CZ |
N和P沟道逻辑电平增强模式场效应晶体管 |
2020-05-28 |
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ESD7351XV2T1G |
3.3V,150mW,ESD?;ざ?/td>
| 2020-05-28 |
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LM431ACZX |
可调/ 2.5V,2%容差分流稳压器 |
2020-05-28 |
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NRVTS2H60ESFT1G |
基于极低正向电压沟道的肖特基整流器 |
2020-05-28 |
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NBA3N5573MNTXG |
PCIe时钟发生器,汽车级,双输出,3.3V |
2020-05-28 |
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NVMFD5C650NLT1G |
60V,111A,4.2mΩ,双N沟道功率MOSFET |
2020-05-28 |
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MM3Z10VB |
10V,200mW,2%齐纳二极管 |
2020-05-28 |
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1N4740ATR |
齐纳二极管,10V 1W 5% |
2020-05-28 |
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NCV-RSL10-101Q48-AVG |
无线电SoC |
2020-05-28 |
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FUSB307BVMPX |
USB Type-C 端口控制器,带 USB-PD |
2020-05-28 |
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MC74HC164BDR2G |
8位串行输入/并行输出移位寄存器 |
2020-05-21 |
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NLV14541BDTR2G |
可编程数字计数器 |
2020-05-21 |
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NLV74HC164ADR2G |
8位串入并出移位寄存器 |
2020-05-21 |
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NLV74HC164ADTR2G |
8位串入并出移位寄存器 |
2020-05-21 |
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TL331VSN4T3G |
比较器,单通道,开集极,低功耗,宽电源范围 |
2020-05-21 |
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NLSV2T244DMR2G |
2位双电源同相电平转换器 |
2020-05-21 |
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NLV9306USG |
双向I2C总线和SMBus电压电平转换器 |
2020-05-21 |
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NLVSV1T34DFT2G |
1位双源非反相电平转换器 |
2020-05-21 |
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CAT24C512HU5IGT3 |
512K,I2C串行存储器 |
2020-05-21 |
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CAT24M01YI-GT3 |
1Mb,I2C串行EEPROM |
2020-05-21 |
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CAT25512YI-GT3 |
512Kb,CMOS EEPROM存储器 |
2020-05-21 |
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CAT25M01YI-GT3 |
1Mb,SPI串行CMOS EEPROM |
2020-05-21 |
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CAV24C128WE-GT3 |
128Kb,I2C串行EEPROM存储器 |
2020-05-21 |
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CAV24C32YE-GT3 |
32Kb,I2C CMOS串行EEPROM |
2020-05-21 |
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CAV24C512WE-GT3 |
汽车级512KbEEPROM串行I2C |
2020-05-21 |
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CAV25256VE-GT3 |
汽车级串行EEPROM,256Kb |
2020-05-21 |
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CAV25512VE-GT3 |
512-Kb SPI汽车级串行EEPROM |
2020-05-21 |
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CAV25M01VE-GT3 |
1Mb,SPI汽车级EEPROM串行 |
2020-05-21 |
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CAV93C76VE-GT3 |
汽车级8Kb微线串行EEPROM |
2020-05-21 |
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NV25256MUW3VTBG |
256K位,SPI串行EEPROM |
2020-05-21 |
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NLV27WZ17DFT2G |
汽车级双路反相器 |
2020-01-07 |
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NLV74AC14DR2G |
带施密特触发器输入的六角反相器 |
2020-01-07 |
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NLV74HC14ADTR2G |
施密特触发入六角反相器 |
2020-01-07 |
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NLV74HCT14ADR2G |
六角反相器 |
2020-01-07 |
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NLVHCT244ADTR2G |
八路3态非反相缓冲器 |
2020-01-07 |
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NLV74VHCT08ADTR2G |
四路2输入与门 |
2020-01-07 |
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NLVVHC1G132DFT1G |
具有施密特触发器输入的单路2输入与非门 |
2020-01-07 |
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NLX1G97MUTCG |
可配置功逻辑门 |
2020-01-07 |
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MC100EP52DR2G |
ECL,差分D触发器 |
2020-01-07 |
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MC74HC74ADG |
双D触发器,带置位和复位端 |
2020-01-07 |
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NLV14521BDR2G |
24级分频器 |
2020-01-07 |
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MC74HCT125ADTR2G |
具有LSTTL兼容输入的四路同相三态缓冲器 |
2020-01-07 |
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MC74VHC50DR2G |
六缓冲器 |
2020-01-07 |
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NLV74VHCT244ADTRG |
八路总线缓冲器 |
2020-01-07 |
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FDME1024NZT |
20V,3.8A,66mΩ,双N沟道功率Trench MOSFET |
2020-01-07 |
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MMBT100 |
NPN通用放大器 |
2020-01-07 |
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FQB34P10TM |
100V 33.5A D2PAK P沟道MOSFET |
2020-01-07 |
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FCP125N65S3R0 |
650V,24A,125mΩ,N通道功率MOSFET |
2020-01-07 |
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1N4448WS |
小信号二极管 |
2020-01-07 |
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MC78L05ACHT1G |
100mA,5V,输出三端正电压稳压器 |
2020-01-07 |
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NTSAF545T3G |
沟槽肖特基整流器,低正向电压,45V,5A |
2020-01-07 |
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FGA40N65SMD |
650V,40A,场截止沟槽IGBT |
2020-01-07 |
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NSVR0240HT1G |
40V,0.25A低IR肖特基二极管 |
2020-01-07 |
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NVJD5121NT1G |
60V,295mA,1.6Ω,双N沟道功率MOSFET,带ESD?;?/td>
| 2020-01-07 |
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NVC3S5A51PLZT1G |
-60V,-1.8A,250mΩ,P沟道功率MOSFET |
2020-01-07 |
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FJP13009H2TU |
高压快速开关NPN功率晶体管 |
2020-01-07 |
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AFGB30T65SQDN |
650V,30A,IGBT |
2019-12-26 |
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AFGB40T65SQDN |
650V,40A IGBT |
2019-12-26 |
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FGH25N120FTDS |
1200V,25A,场截止沟道IGBT |
2019-12-26 |
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FGH75T65UPD-F085 |
650V,75A,1.69V,场截止沟槽IGBT |
2019-12-26 |
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FGY60T120SQDN |
IGBT,超场停止-1200V,60A |
2019-12-26 |
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NRVHP820MFDT1G |
200V,超快恢复双模整流器 |
2019-12-26 |
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NRVHPRS1AFA |
0.8A,50V,表面贴装快速恢复整流器 |
2019-12-26 |
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NRVHPRS1GFA |
0.8A,400V,表面贴装快速恢复二极管 |
2019-12-26 |
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NRVUS110VT3G |
1A,100V,超快恢复功率整流器 |
2019-12-26 |
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FFPF08H60STU |
8A,600V,超高速II代二极管 |
2019-12-26 |
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NRVUHS160VT3G |
600V,1A超快速整流器 |
2019-12-26 |
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NRVUS2GA |
超快速表面贴装整流器 |
2019-12-26 |
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NRVUS360VDBT3G |
600V,3A,表面贴装超快速电源整流器 |
2019-12-26 |
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RHRG75120 |
75A,1200V,超高速二极管 |
2019-12-26 |
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RHRP30120 |
30A,1200V,超快速二极管 |
2019-12-26 |
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SURS8320T3G |
200V,3A超快恢复功率整流器 |
2019-12-26 |
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NRVHP8H200MFDT1G |
开关模式功率整流器 |
2019-12-26 |
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FFSB20120A-F085 |
1200V,汽车级碳化硅肖特基二极管 |
2019-12-26 |
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FFSB2065B-F085 |
650V,20A,汽车碳化硅(SiC)肖特基二极管 |
2019-12-26 |
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FFSD0465A |
650V,4A,碳化硅肖特基二极管 |
2019-12-26 |
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FFSH40120ADN-F085 |
碳化硅肖特基二极管 |
2019-12-26 |
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FFSM0865A |
650V,8A,碳化硅二极管 |
2019-12-26 |
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FFSPF0865A |
650V,8A,碳化硅(SiC)肖特基二极管 |
2019-12-26 |
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FFSPF1065A |
650V,10A,碳化硅肖特基二极管 |
2019-12-26 |
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MBR0530T3G |
肖特基功率整流管,SM,0.5A,30V |
2019-12-26 |
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NRVB1240MFST1G |
12A,40V肖特基二极管 |
2019-12-26 |
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NRVB440MFSWFT1G |
4A,40V,肖特基功率整流器,开关模式 |
2019-12-26 |
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NRVB860MFST1G |
8A,60V,肖特基二极管 |
2019-12-26 |
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NRVBA160T3G |
60V,1A,表贴式肖特基功率整流器 |
2019-12-26 |
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NRVTS12120MFST1G |
12A,120V,沟槽低VF肖特基整流器 |
2019-12-26 |
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NTS1045EMFST1G |
10A,45V,极低漏电沟槽肖特基整流器 |
2019-12-26 |
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SMMSD103T1G |
250V高压开二极管 |
2019-12-26 |
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ESD8004MUTAG |
ESD?;ふ罅?,USB 3.0 |
2019-12-26 |
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ESDM3051N2T5G |
ESD?;ざ?,5V |
2019-12-26 |
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PACDN006MR |
ESD?;ふ罅?/td>
| 2019-12-26 |
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SZESD7104MUTAG |
ESD?;ざ?,低电容,高速数据 |
2019-12-26 |
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SZESD9B3.3ST5G |
双向ESD?;ざ?/td>
| 2019-12-26 |
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FDH055N15A |
150V,167A,5.9mΩ,N沟道PowerTrench MOSFET |
2019-12-10 |
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FDMC010N08C |
80V,51A,10mΩ,N通道屏蔽栅极功率MOSFET |
2019-12-10 |
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FDMD8560L |
60V,22A,3.2mΩ,双N沟道功率Trench MOSFET |
2019-12-10 |
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FDMS0300S |
30V,49A,1.8mΩ,N沟道MOSFET |
2019-12-10 |
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FDMS3620S |
25V,非对称双N沟道功率MOSFET |
2019-12-10 |
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FDMS3626S |
25V,非对称双N沟道功率级MOSFET |
2019-12-10 |
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FDMS3D5N08LC |
80V,136A,3.5mΩ,单N通道功率MOSFET |
2019-12-10 |
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FDMS8090 |
100V,40A,13mΩ对称双N沟道功率MOSFET |
2019-12-10 |
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FDMS86252 |
150V,51mΩ,16A,N沟道功率MOSFET |
2019-12-10 |
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FDP085N10A-F102 |
100V,96A,8.5mΩ,N沟道功率MOSFET |
2019-12-10 |
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FDPF20N50 |
500V,20A,230mΩ,N通道功率MOSFET |
2019-12-10 |
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FDPF20N50FT |
500V,20A,260mΩ,N通道功率MOSFET |
2019-12-10 |
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FDPF39N20 |
200V,39A,66mΩ,N通道功率MOSFET |
2019-12-10 |
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FDPF4D5N10C |
100V, 128A,4.5mΩ,N通道PowerMOSFET |
2019-12-10 |
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FDPF8D5N10C |
100V,76A,8.5mΩ,N沟道屏蔽栅极功率MOSFET |
2019-12-10 |
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FDS8949 |
40V,6A,29mΩ,双N沟道功率MOSFET |
2019-12-10 |
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FDS8978 |
30V,7.5A,18mΩ,N沟道功率MOSFET |
2019-12-10 |
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FDU5N50NZTU |
500V,4A,1.5Ω,N通道功率MOSFET |
2019-12-10 |
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FDU5N60NZTU |
600V,4A,2Ω,N通道功率MOSFET |
2019-12-10 |
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FQB9N50CTM |
500V,9A,800mΩ,N通道功率MOSFET |
2019-12-10 |
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FQL40N50 |
500V,40A,110mΩ,N通道功率MOSFET |
2019-12-10 |
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FQP7N80C |
800V,6.6A,1.9Ω,N沟道功率QFET MOSFET |
2019-12-10 |
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FQP9N50C |
500V,9A,800mΩ,N通道功率MOSFET |
2019-12-10 |
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NTB110N65S3HF |
650V,30A,110mΩ,N沟道SUPERFET III MOSFET |
2019-12-10 |
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NTHL033N65S3HF |
650V,70A,33mΩ,N通道功率MOSFET |
2019-12-10 |
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NTMFS4C025NT1G |
30V,69A,3.41mΩ,N沟道功率MOSFET |
2019-12-10 |
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NTMFS5C442NLTT3G |
40V,130A,2.5mΩ,单N沟道功率MOSFET |
2019-12-10 |
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NTMFS5H630NLT1G |
60V,120A,3.1mΩ,N沟道功率MOSFET |
2019-12-10 |
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NTMFS6B03NT3G |
100V,132A,4.8mΩ,单N沟道功率MOSFET |
2019-12-10 |
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NTPF082N65S3F |
650V,40A,82mΩ,N通道功率MOSFET |
2019-12-10 |
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NTTFS4C05NTWG |
30V,75A,3.6mΩ单N沟道功率MOSFET |
2019-12-10 |
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NTTFS4C08NTAG |
30V,52A,5.9mΩ,单N沟道功率MOSFET |
2019-12-10 |
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NTTFS4C13NTAG |
30V,38A,9.4mΩ,单N沟道功率MOSFET |
2019-12-10 |
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NTTFS5C453NLTWG |
40V,107A,3mΩ,N沟道功率MOSFET |
2019-12-10 |
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NTTFS6H850NTAG |
80V,68A,9.5mΩ,单N沟道功率MOSFET |
2019-12-10 |
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NVD3055L170T4G |
60V,9A,170mΩ,N沟道逻辑电平功率MOSFET |
2019-12-10 |
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NVD5C648NLT4G |
60V,89A,4.1mΩ,N沟道功率MOSFET |
2019-12-10 |
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NVD6416ANLT4G-VF01 |
100V,19A,74mΩ,N沟道功率MOSFET |
2019-12-10 |
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NVHL027N65S3F |
650V,65A,27.4mΩ,单N沟道功率MOSFET |
2019-12-10 |
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NVHL040N65S3F |
650V,65A,40mΩ,N沟道功率MOSFET |
2019-12-10 |
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NVHL080N120SC1 |
1200V,44A,80mΩ,N沟道碳化硅MOSFET |
2019-12-10 |
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NVMFS4C310NT1G |
30V,51A,6mΩ,单N通道功率MOSFET |
2019-12-10 |
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NVMFS5C426NWFAFT1G |
40V,235A,1.3mΩ,N沟道功率MOSFET |
2019-12-10 |
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NVMFS5C460NLAFT1G |
40V,78A,4.5mΩ,单N沟道功率MOSFET |
2019-12-10 |
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NVMFS5C468NLAFT1G |
40V,37A,10.3mΩ,N沟道功率MOSFET |
2019-12-10 |
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NVMFS5C638NLWFT1G |
60V,133A,3mΩ,N沟道MOSFET |
2019-12-10 |
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NVMFS6H818NT1G |
80V,123A,3.7mΩ,N沟道功率MOSFET |
2019-12-10 |
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NVMFS6H852NT1G |
80V,43A,14.2mΩ,单N沟道功率MOSFET |
2019-12-10 |
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NVTFS5C680NLWFTAG |
60V,20A,26.5mΩ,单N沟道功率MOSFET |
2019-12-10 |
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NVTFS6H850NTAG |
80V,68A,9.5mΩ,单N沟道功率MOSFET |
2019-12-10 |
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NVTFS6H850NWFTAG |
80V,68A,9.5mΩ,单N沟道功率MOSFET |
2019-12-10 |
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1N5386BRLG |
5W,齐纳二极管 |
2019-12-10 |
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SZ1SMA5936BT3G |
30V,1.5W齐纳稳压管 |
2019-12-10 |
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SZBZX84C6V8LT1G |
6.8V,225mW, ±5%齐纳二极管稳压器 |
2019-12-10 |
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SZMM3Z16VST1G |
16V齐纳二极管电压稳压器 |
2019-12-10 |
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SZMM3Z43VT1G |
300mW,43V,±5%齐纳稳压管 |
2019-12-10 |
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SZMM5Z2V4T5G |
500mW标准容差齐纳二极管稳压器 |
2019-12-10 |
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SZMMBZ5234BLT1G |
225mW 5%齐纳稳压管6.2V |
2019-12-10 |
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SZMMSZ5230BT1G |
500mW,齐纳二极管 |
2019-12-10 |
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SZMMSZ5237BT1G |
500mW,齐纳二极管 |
2019-12-10 |
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 |
SZMMSZ5250BT1G |
500mW,齐纳二极管 |
2019-12-10 |
 |
 |
SZMMSZ5V6T1G |
500mW,5.6V,±5%齐纳稳压管 |
2019-12-10 |
 |
 |
FCA20N60 |
600V,20A,190mΩ,N通道功率MOSFET |
2019-11-21 |
 |
 |
FDMC2523P |
-150V,-3A,1.5Ω,P沟道功率QFET MOSFET |
2019-11-21 |
 |
 |
FDS9958 |
-60V,-2.9A,105mΩ,双P沟道MOSFET |
2019-11-21 |
 |
 |
NDS9407 |
-60V,-3A,150mΩ,单P沟道功率MOSFET |
2019-11-21 |
 |
 |
NVATS5A113PLZT4G |
-60V,-38A,29.5mΩ,P沟道功率MOSFET |
2019-11-21 |
 |
 |
NVATS68301PZT4G |
-100V,-31A,75mΩ,P沟道功率MOSFET |
2019-11-21 |
 |
 |
CPH6445-TL-W |
60V,3.5A,117mΩ,N沟道功率MOSFET |
2019-11-21 |
 |
 |
FDBL0240N100 |
100V,210A,2.8mΩ,N沟道功率Trench MOSFET |
2019-11-21 |
 |
 |
FDC8886 |
30V,6.5A,23mΩ,N沟道功率MOSFET |
2019-11-21 |
 |
 |
FDD10AN06A0 |
60V,50A,10.5mΩ,N沟道功率Trench MOSFET |
2019-11-21 |
 |
 |
FDD5810-F085 |
60V,36A,27mΩ,N沟道逻辑电平Trench MOSFET |
2019-11-21 |
 |
 |
FDD8445 |
40V,50A,8.7mΩ,N沟道功率MOSFET |
2019-11-21 |
 |
 |
FDI038AN06A0 |
60V,80A,3.8mΩ,N沟道功率MOSFET |
2019-11-21 |
 |
 |
FDL100N50F |
500V,100A,55mΩ,N沟道UniFETTM MOSFET |
2019-11-21 |
 |
 |
AP0202AT2L00XPGA0-DR |
图像信号处理器 |
2019-11-21 |
 |
 |
AR0132AT6C00XPEA0-DRBR |
1.2MP,图像传感器 |
2019-11-21 |
 |
 |
AR0135CS2M00SUEA0-DPBR |
图像传感器1.2MP |
2019-11-21 |
 |
 |
AR0144CSSC00SUKA0-CRBR1 |
CMOS图像传感器 |
2019-11-21 |
 |
 |
AR0144CSSC20SUKA0-CRBR1 |
图像传感器 |
2019-11-21 |
 |
 |
AR0144CSSM00SUKA0-CRBR1 |
1MP图像传感器 |
2019-11-21 |
 |
 |
AR0220AT3B00XUEA0-DPBR |
CMOS图像传感器 |
2019-11-21 |
 |
 |
AR0220AT3C00XUEA0-DPBR |
1.7MP图像传感器 |
2019-11-21 |
 |
 |
AR0331SRSC00XUEE0-DRBR1 |
CMOS图像传感器 |
2019-11-21 |
 |
 |
MT9J003I12STMV-DP |
10MP,1CMOS图像传感器 |
2019-11-21 |
 |
 |
NOIP1FN0300A-QTI |
CMOS图像传感器,0.3MP,全局快门 |
2019-11-21 |
 |
 |
FCB36N60NTM |
600V,36A,90mΩ,N沟道功率MOSFET |
2019-11-01 |
 |
 |
FCD360N65S3R0 |
650V,10A,360mΩ,N通道功率MOSFET |
2019-11-01 |
 |
 |
FCD850N80Z |
800V,6A,850mΩ,N沟道功率MOSFET |
2019-11-01 |
 |
 |
FCH077N65F-F155 |
650 V,54 A,77mΩ,N通道功率MOSFET |
2019-11-01 |
 |
 |
FCH190N65F-F155 |
650V,20.6A,190mΩ,N通道功率MOSFET |
2019-11-01 |
 |
 |
FCH47N60F-F133 |
600V,47A,73mΩ,N通道功率MOSFET |
2019-11-01 |
 |
 |
FCH47N60NF |
600V,45.8A,65mΩ,N通道功率MOSFET |
2019-11-01 |
 |
 |
FCP22N60N |
600V,22A,165mΩ,N沟道SupreMOS MOSFET |
2019-11-01 |
 |
 |
FCP36N60N |
600V,36A,90mΩ,N沟道SupreMOS MOSFET |
2019-11-01 |
 |
 |
FCPF165N65S3R0L |
650V,19A,165mΩ,N沟道SUPERFET III MOSFET |
2019-11-01 |
 |
 |
FCPF190N60E |
600V,20.6A,190mΩ,N沟道功率MOSFET |
2019-11-01 |
 |
 |
FCPF190N65S3R0L |
650V,17A,190mΩ,N沟道SUPERFET III MOSFET |
2019-11-01 |
 |
 |
FCPF20N60 |
600V,190mΩ,20A,N通道功率MOSFET |
2019-11-01 |
 |
 |
FCPF250N65S3L1 |
650V,12A,250mΩ,N通道功率MOSFET |
2019-11-01 |
 |
 |
FCPF400N80Z |
800V,14A,400mΩ,N沟道SUPERFET II MOSFET |
2019-11-01 |
 |
 |
FCU850N80Z |
800V,6A,850mΩ,N通道功率MOSFET |
2019-11-01 |
 |
 |
FDA032N08 |
235A,75V,3.2mΩ,N沟道功率MOSFET |
2019-11-01 |
 |
 |
FDMS86101 |
FDMS86101100V,60A,8mΩ,N沟道MOSFET |
2019-11-01 |
 |
 |
MB10S |
0.5A,整流桥 |
2019-11-01 |
 |
 |
74LVC06ADR2G |
具有漏极开路输出和5V容差低压六路反向器 |
2019-11-01 |
 |
 |
NC7SZ32L6X |
2输入或门 |
2019-11-01 |
 |
 |
FAN3852UC16X |
具有数字输出的麦克风前置放大器 |
2019-11-01 |
 |
 |
2SA2039-E |
-50V,-5A,低VCE(sat),PNP双极晶体管 |
2019-10-10 |
 |
 |
BC849BLT1G |
30V,100mA,NPN双极晶体管 |
2019-10-10 |
 |
 |
NSV60601MZ4T3G |
60V,6A,NPN低饱和电压晶体管 |
2019-10-10 |
 |
 |
CPH5524-TL-E |
PNP/NPN互补低VCE(Sat)晶体管,(-)50V,(-)6A |
2019-10-10 |
 |
 |
NSV1C201LT1G |
100V,2A,NPN低VCE(sat)双极晶体管 |
2019-10-10 |
 |
 |
NSV60600MZ4T3G |
-60V,-6A,PNP低饱和电压晶体管 |
2019-10-10 |
 |
 |
NSS1C300ET4G |
3A,100V低VCE(sat)PNP晶体管 |
2019-10-10 |
 |
 |
NSVF5488SKT3G |
用于低噪声放大器的RF晶体管 |
2019-10-10 |
 |
 |
GBPC3508 |
35A,桥式整流器 |
2019-10-10 |
 |
 |
2SK3557-7-TB-E |
15V,10~32mA,N沟道JFET |
2019-10-10 |
 |
 |
SMMBFJ177LT1G |
P沟道JFET晶体管 |
2019-10-10 |
 |
 |
PCA9654EDTR2G |
8位I2C/SMBus,I/O扩展器,带中断 |
2019-10-10 |
 |
 |
FDD86250 |
150V,51A,22mΩ,N沟道功率MOSFET |
2019-10-10 |
 |
 |
SZMMBZ5226BLT1G |
225mW,3.3V,±5%齐纳稳压管 |
2019-10-10 |
 |
 |
FDB035N10A |
100V,214A,3.5mΩ,N沟道功率Trench MOSFET |
2019-10-10 |
 |
 |
KSA1220AYS |
PNP外延硅晶体管 |
2019-10-10 |
 |
 |
SZMMSZ4705T1G |
18V,齐纳稳压管 |
2019-09-19 |
 |
 |
SZMMSZ5233BT1G |
500mW,齐纳二极管 |
2019-09-19 |
 |
 |
SZMMSZ5255BT1G |
500mW,齐纳二极管 |
2019-09-19 |
 |
 |
SURA8260T3G |
600V,2A超快恢复功率整流器 |
2019-09-19 |
 |
 |
NRVHP620MFDT1G |
6A,200V超快双模整流器 |
2019-09-19 |
 |
 |
S1MFL |
表面通用整流器 |
2019-09-19 |
 |
 |
NRVS3KB |
3A,800V表面贴装整流器 |
2019-09-19 |
 |
 |
SBAS21DW5T1G |
250V高压开关二极管 |
2019-09-19 |
 |
 |
NSVBAS20LT3G |
200V开关二极管 |
2019-09-19 |
 |
 |
SZSM05T1G |
5V,双路共阳二极管TVS带ESD?;?/td>
| 2019-09-19 |
 |
 |
ESD5581N2T5G |
5V,10pF,ESD双向?;ざ?/td>
| 2019-09-19 |
 |
 |
ESD7410N2T5G |
超低电容ESD?;?/td>
| 2019-09-19 |
 |
 |
SRV05-4MR6T1G |
具有低钳位电压的ESD?;ざ?/td>
| 2019-09-19 |
 |
 |
SZESD7016MUTAG |
USB 3.0,低电容,ESD?;ざ?/td>
| 2019-09-19 |
 |
 |
ESDU3121MXT5G |
12V单向ESD?;て骷?/td>
| 2019-09-19 |
 |
 |
ESD8704MUTAG |
单向高速数据线?;?/td>
| 2019-09-19 |
 |
 |
MUN5213DW1T3G |
双路NPN双极数字晶体管 |
2019-09-19 |
 |
 |
NSBA124EDXV6T1G |
50V双极数字晶体管(BRT) |
2019-09-19 |
 |
 |
NSVMMUN2233LT3G |
NPN双极数字晶体管(BRT) |
2019-09-19 |
 |
 |
NCP1117DT18T5G |
1A,1.8V低压差稳压器 |
2019-09-19 |
 |
 |
NRVTSA3100ET3G |
低正向电压,低漏电沟槽肖特基整流器 |
2019-09-03 |
 |
 |
NRVTSAF360T3G |
60V,3A,低正向沟槽肖特基整流器 |
2019-09-03 |
 |
 |
NSVR201MXT5G |
用于混频器和探测器的肖特基势垒二极管 |
2019-09-03 |
 |
 |
NSVR351SDSA3T1G |
用于混频器和探测器的肖特基势垒二极管 |
2019-09-03 |
 |
 |
NTSAF345T3G |
45V,3A,沟槽肖特基整流器,低正向电压 |
2019-09-03 |
 |
 |
NTSB40100CTT4G |
40A,100V,双通道肖特基功率整流器 |
2019-09-03 |
 |
 |
RB751S40T5G |
30V,肖特基势垒二极管 |
2019-09-03 |
 |
 |
SBAS40-04LT1G |
40V,双路肖特基二极管 |
2019-09-03 |
 |
 |
SBRA8160T3G |
60V,1A肖特基整流二极管 |
2019-09-03 |
 |
 |
SBRD81045T4G |
45V,10A开关模式肖特基功率整流器 |
2019-09-03 |
 |
 |
SBR80520LT1G |
20V,0.5A肖特基功率整流器 |
2019-09-03 |
 |
 |
NRVBB4030T4G |
30V,40A肖特基整流二极管 |
2019-09-03 |
 |
 |
NRVBAF260T3G |
60V,2A低VF肖特基整流器 |
2019-09-03 |
 |
 |
1SMF5920BT1G |
6.2V,齐纳二极管 |
2019-09-03 |
 |
 |
MM3Z75VB |
75V,200mW,2%,齐纳管 |
2019-09-03 |
 |
 |
SZ1SMA5923BT3G |
8.2V,1.5W,齐纳稳压管 |
2019-09-03 |
 |
 |
SZ1SMB5918BT3G |
5.1V,3.0W,齐纳稳压管 |
2019-09-03 |
 |
 |
SZ1SMB5922BT3G |
7.5V,3.0W,齐纳稳压管 |
2019-09-03 |
 |
 |
SZBZX84B18LT1G |
250mW,18V,±2%,齐纳二极管电压调节器 |
2019-09-03 |
 |
 |
SZBZX84B5V6LT1G |
225mW,5.6V,±2%齐纳稳压管 |
2019-09-03 |
 |
 |
SZBZX84C13ET1G |
225W,13V,齐纳二极管 |
2019-09-03 |
 |
 |
SZMM3Z22VT1G |
300mW,22V,±5%,齐纳二极管电压调节器 |
2019-09-03 |
 |
 |
SZMM3Z4V7T1G |
300mW,4.7V,±5%,齐纳稳压管 |
2019-09-03 |
 |
 |
SZMM5Z5V1ST1G |
500mW,5.1V,±2%,齐纳稳压二极管 |
2019-09-03 |
 |
 |
SZMM5Z5V6ST1G |
500mW,5.6V,±2%,齐纳稳压管 |
2019-09-03 |
 |
 |
SZMMBZ15VAWT1G |
40W,15V,齐纳?;ざ?/td>
| 2019-09-03 |
 |
 |
SZMMSZ27T1G |
500mW,27V,±5%,齐纳稳压管 |
2019-09-03 |
 |
 |
SZMMSZ4694T1G |
8.2V,齐纳稳压管 |
2019-09-03 |
 |
 |
SZMMSZ4704T1G |
17V低电流齐纳二极管电压稳压器 |
2019-09-03 |
 |
 |
FIN1002M5X |
3.3V LVDS 1位高速差分接收器 |
2019-09-03 |
 |
 |
BC550CTA |
500mW,NPN外延硅晶体管 |
2019-09-03 |
 |
 |
MICROFC-60035-SMT-TR |
硅光电倍增管传感器 |
2019-09-03 |
 |
 |
FAN7888MX |
225V,0.65/0.35A灌/源电流,3相半桥栅极驱动 |
2019-09-03 |
 |
 |
FDN537N |
30V,6.5A,23mΩ,N沟道功率MOSFET |
2019-09-03 |
 |
 |
FFA60UP30DNTU |
60A,300V,超快速双二极管 |
2019-09-03 |
 |
 |
ISL9R3060G2 |
30A,600V,STEALTH二极管 |
2019-09-03 |
 |
 |
MURA205T3G |
50V,2A超快恢复功率整流器 |
2019-09-03 |
 |
 |
NRVUD340T4G |
400V,3A超快开关模式功率整流器 |
2019-09-03 |
 |
 |
NRVUS360VBT3G |
600V,3A,超快速整流器 |
2019-09-03 |
 |
 |
AFGHL40T65SPD |
650V,40A,IGBT |
2019-08-16 |
 |
 |
FGA15N120ANTDTU-F109 |
1200V,15A,NPT沟道IGBT |
2019-08-16 |
 |
 |
FGA25N120ANTDTU |
1200V,25A,NPT沟道IGBT |
2019-08-16 |
 |
 |
FGA50T65SHD |
650V,50A,场截止沟道IGBT |
2019-08-16 |
 |
 |
FGH40N60SFDTU |
600V,40A,N沟道场截止IGBT |
2019-08-16 |
 |
 |
FGH40T65SQD-F155 |
650V,40A,场截止沟道IGBT |
2019-08-16 |
 |
 |
FGH60N60SFDTU |
600V,60A,场截止沟道IGBT |
2019-08-16 |
 |
 |
FGH60T65SQD-F155 |
650V,60A,场截止沟槽IGBT |
2019-08-16 |
 |
 |
FGH75T65SQDNL4 |
650V,75A,隔离门双极晶体管(IGBT),场截止型 |
2019-08-16 |
 |
 |
FGH75T65UPD |
650V,75A,场截止沟槽IGBT |
2019-08-16 |
 |
 |
FGL40N120ANTU |
1200V,40A,NPT IGBT |
2019-08-16 |
 |
 |
FGL60N100BNTDTU |
1000V,60A,NPT沟道IGBT |
2019-08-16 |
 |
 |
FGPF15N60UNDF |
600V,15A,IGBT |
2019-08-16 |
 |
 |
HGTG30N60B3D |
600V,30A,PT 绝缘门双极晶体管IGBT |
2019-08-16 |
 |
 |
SGH40N60UFDTU |
600V,20A,PT IGBT |
2019-08-16 |
 |
 |
HGTG20N60B3 |
600V, 20A,PT IGBT |
2019-08-16 |
 |
 |
FFSB0665A |
650V,6A,碳化硅肖特基二极管 |
2019-08-16 |
 |
 |
FFSB0865A |
-650V ,8A ,碳化硅(SiC)肖特基二极管 |
2019-08-16 |
 |
 |
FFSB1065A |
-650V,10A,碳化硅(SIC)肖特基二极管 |
2019-08-16 |
 |
 |
FFSB1265A |
-650V,12A,碳化硅肖特基二极管, |
2019-08-16 |
 |
 |
FFSB3065B-F085 |
650V,30A,汽车碳化硅(SiC)肖特基二极管 |
2019-08-16 |
 |
 |
FFSD0665A |
-650V,6A,碳化硅肖特基二极管 |
2019-08-16 |
 |
 |
FFSD0865A |
-650V,8A,碳化硅肖特基二极管 |
2019-08-16 |
 |
 |
FFSH10120A |
1200V,10A,碳化硅肖特基二极管 |
2019-08-16 |
 |
 |
FFSH10120A-F085 |
1200V,10A,碳化硅肖特基二极管 |
2019-08-16 |
 |
 |
FFSH15120A |
1200V,15A,碳化硅肖特基二极管 |
2019-08-16 |
 |
 |
FFSH1665A |
-650V,16A,碳化硅肖特基二极管 |
2019-08-16 |
 |
 |
FFSH1665ADN-F155 |
650V,16A,碳化硅肖特基二极管, |
2019-08-16 |
 |
 |
FFSH20120A-F085 |
1200V,20A,碳化硅肖特基二极管 |
2019-08-16 |
 |
 |
FFSH2065A |
20A,-650V,碳化硅二极管 |
2019-08-16 |
 |
 |
FFSH30120A |
1200V,30A,碳化硅肖特基二极管 |
2019-08-16 |
 |
 |
FFSH3065A |
30A,-650V,碳化硅二极管 |
2019-08-16 |
 |
 |
FFSH3065ADN-F155 |
650V,30A,碳化硅肖特基二极管 |
2019-08-16 |
 |
 |
FFSH3065B-F085 |
650V,30A,汽车级碳化硅(SiC)肖特基二极管 |
2019-08-16 |
 |
 |
FFSH40120A |
1200V,40A,碳化硅肖特基二极管 |
2019-08-16 |
 |
 |
FFSH4065A |
650V,40A,碳化硅肖特基二极管 |
2019-08-16 |
 |
 |
FFSH4065ADN-F155 |
650V,40A,碳化硅肖特基二极管 |
2019-08-16 |
 |
 |
FFSH50120A |
1200V,50A,碳化硅二极管 |
2019-08-16 |
 |
 |
FFSP2065A |
-650V,20A,碳化硅肖特基二极管 |
2019-08-16 |
 |
 |
FFSPF0665A |
-650V,6A,碳化硅肖特基二极管 |
2019-08-16 |
 |
 |
FYPF2010DNTU |
肖特基势垒整流器 |
2019-08-16 |
 |
 |
NRVB8H100MFST1G |
8A,100V,肖特基二极管 |
2019-08-16 |
 |
 |
NRVBA1H100T3G |
100V,1A,表贴式肖特基功率整流器 |
2019-08-16 |
 |
 |
NRVBAF440T3G |
4.0A,40V,肖特基整流器 |
2019-08-16 |
 |
 |
FDP8D5N10C |
100V,76A,8.5mΩ,N通道功率MOSFET |
2019-07-22 |
 |
 |
FDPF045N10A |
100V,67A,4.5mΩ,N沟道功率Trench MOSFET |
2019-07-22 |
 |
 |
FDPF085N10A |
100V,40A,8.5mΩ,N沟道功率MOSFET |
2019-07-22 |
 |
 |
FDPF190N15A |
150V,27.4A,19mΩ,N沟道功率Trench MOSFET |
2019-07-22 |
 |
 |
FDS3992 |
100V,4.5A,62mΩ,双N沟道功率MOSFET |
2019-07-22 |
 |
 |
FDS6898AZ-F085 |
20V,9.4A,10mΩ,逻辑电平双N沟道功率MOSFET |
2019-07-22 |
 |
 |
FDS86252 |
150V,4.5A,55mΩ,N沟道功率Trench MOSFET |
2019-07-22 |
 |
 |
FDS8817NZ |
30V,15A,7mΩ,N沟道PowerTrench MOSFET |
2019-07-22 |
 |
 |
FDV303N |
25V,0.68A,0.45Ω,数字FET,N沟道MOSFET |
2019-07-22 |
 |
 |
FQA13N80-F109 |
800V,12.6A,750mΩ,N沟道 QFET MOSFET |
2019-07-22 |
 |
 |
FQA24N50 |
500V,24A,200mΩ,N沟道QFET MOSFET |
2019-07-22 |
 |
 |
FQA38N30 |
300V,38.4A,85mΩ,N沟道QFET MOSFET |
2019-07-22 |
 |
 |
FQA40N25 |
250V,40A,70mΩ,N沟道QFET MOSFET |
2019-07-22 |
 |
 |
FQA9N90C-F109 |
900V,9A,1.4Ω,N沟道QFET MOSFET |
2019-07-22 |
 |
 |
FQD9N25TM |
250V,7.4A,420mΩ,N沟道QFET MOSFET |
2019-07-22 |
 |
 |
FQP11N40C |
400V,10.5A,530mΩ,N沟道功率QFET MOSFET |
2019-07-22 |
 |
 |
FQP16N25 |
250V,16A,230mΩ,N沟道 QFET MOSFET |
2019-07-22 |
 |
 |
FQPF6N80C |
800V,5.5A,2.5Ω,N沟道 QFET MOSFET |
2019-07-22 |
 |
 |
FQPF8N60C |
600V,7.5A,1.2Ω,N沟道QFET Power MOSFET |
2019-07-22 |
 |
 |
NTHL040N65S3F |
650V,65A,40mΩ,N沟道SUPERFET功率MOSFET |
2019-07-22 |
 |
 |
NTHL082N65S3F |
650V,40A,82mΩ,N沟道Power MOSFET |
2019-07-22 |
 |
 |
NTMFS4931NT1G |
30V,246A,1.1mΩ,N沟道功率MOSFET |
2019-07-22 |
 |
 |
NTMFS4C024NT1G |
30V,78A,2.8mΩ,N沟道功率MOSFET |
2019-07-22 |
 |
 |
NTMFS5C456NLT1G |
40V,87A,3.7mΩ,单N沟道功率MOSFET |
2019-07-22 |
 |
 |
NTMFS5C628NLT3G |
60V,150A,2.4mΩ,N沟道功率MOSFET |
2019-07-22 |
 |
 |
NTMFS5C645NLT1G |
60V,100A,4.0mΩ,N沟道功率MOSFET |
2019-07-22 |
 |
 |
NTMFS6D1N08HT1G |
80V,89A,5.5mΩ,N沟道功率MOSFET |
2019-07-22 |
 |
 |
NVBLS0D7N04M8TXG |
40V,240A,0.75mΩ,单N沟道功率MOSFET |
2019-07-22 |
 |
 |
NVMFD5C470NT1G |
40V,36A,11.4mΩ,双N沟道功率MOSFET |
2019-07-22 |
 |
 |
NVMFD5C478NLT1G |
40V,29A,14.5mΩ,双N沟道功率MOSFET |
2019-07-22 |
 |
 |
NVMFS5C450NLAFT1G |
40V,110A,2.8mΩ,N沟道功率MOSFET |
2019-07-22 |
 |
 |
NVMFS5C460NLWFAFT1G |
40V,78A,4.5mΩ,单N沟道功率MOSFET |
2019-07-22 |
 |
 |
NVMFS5C466NT1G |
40V,49A,8.1mΩ,N沟道功率MOSFET |
2019-07-22 |
 |
 |
NVMFS5C628NLWFAFT1G |
60V,150A,2.4mΩ,单N沟道功率MOSFET |
2019-07-22 |
 |
 |
NVMFS5C677NLT1G |
60V,36A,15mΩ,N沟道功率MOSFET |
2019-07-22 |
 |
 |
NVMFS5C680NLWFT1G |
60V,21A,27.5mΩ,N沟道功率MOSFET |
2019-07-22 |
 |
 |
NVTR4503NT1G |
30V,2.5A,110mΩ,小信号N沟道MOSFET |
2019-07-22 |
 |
 |
NTPF110N65S3HF |
650V,30A,110mΩ,N通道功率MOSFET |
2019-07-22 |
 |
 |
FCP165N65S3 |
650V,19A,165mΩ,N通道功率MOSFET |
2019-07-22 |
 |
 |
FDMC86184 |
100V,57A,8.5mΩ,N沟道屏蔽栅极 Power MOSFET |
2019-07-22 |
 |
 |
FDB9409-F085 |
40V,80A,3.5mΩ,车用N沟道MOSFET |
2019-07-22 |
 |
 |
FDT86246L |
150V,2A,228mΩ,N沟道Power MOSFET |
2019-07-22 |
 |
 |
FDS89161LZ |
100V,2.7A,105mΩ,双N沟道屏蔽栅极MOSFET |
2019-07-22 |
 |
 |
NCV84160DR2G |
受?;さ腗OSFET高侧驱动器,12A,160mΩ |
2019-07-22 |
 |
 |
FQPF9P25 |
620mΩ,-250V,-6A,P沟道QFET功率MOSFET |
2019-07-22 |
 |
 |
FGH20N60UFDTU |
600V,20A,场截止IGBT |
2019-07-22 |
 |
 |
NLV74HC14ADR2G |
带施密特触发器输入的六角反相器 |
2019-07-22 |
 |
 |
FQD3P50TM-AM002BLT |
4.9Ω,-500V,-2.1AP沟道功率QFET MOSFET |
2019-07-22 |
 |
 |
FAN5353MPX |
3Mhz,3A同步降压稳压器 |
2019-07-22 |
 |
 |
TL331SN4T3G |
比较器,单通道,开集极,低功耗,宽电源范围 |
2019-07-22 |
 |
 |
NVMFD5C680NLT1G |
60V,26A,28mΩ,双N沟道功率MOSFET |
2019-07-22 |
 |
 |
FCP20N60 |
600V,190mΩ,20A,N通道功率MOSFET |
2019-07-22 |
 |
 |
FCH47N60N |
600V,62mΩ,47A,N通道功率MOSFET |
2019-07-22 |
 |
 |
FCH104N60F-F085 |
600V,104mΩ,37A,N沟道MOSFET |
2019-07-22 |
 |
 |
FQP5N60C |
600V,2500mΩ,4.5A,N通道功率MOSFET |
2019-07-22 |
 |
 |
FQPF10N60C |
600V,730mΩ,9.5A,N通道功率MOSFET |
2019-07-22 |
 |
 |
NTP4813NLG |
30V,13.1mΩ,51A,N沟道MOSFET |
2019-07-22 |
 |
 |
NVHL072N65S3 |
650V,72mΩ,44A,单N沟道功率MOSFET |
2019-07-22 |
 |
 |
FQP46N15 |
150V,42mΩ,45.6A,N沟道QFET?MOSFET |
2019-07-22 |
 |
 |
MCH6663-TL-W |
N&P沟道互补双功率MOSFET |
2019-07-22 |
 |
 |
AR0144ATSM20XUEA0-DPBR |
"AR0144ATSM20XUEA0-DPBR"CMOS图像传感器 |
2019-07-22 |
 |
 |
FDMS86101DC |
100V,60A,7.5mΩ,N沟道功率MOSFET |
2019-06-28 |
 |
 |
FCP600N65S3R0 |
650V,6A,600mΩ,N通道功率MOSFET |
2019-06-28 |
 |
 |
FCPF125N65S3 |
650V,24A,125mΩ,N沟道功率MOSFET |
2019-06-28 |
 |
 |
FCPF190N60 |
600V,20.2A,199mΩ,N沟道SupFET II MOSFET |
2019-06-28 |
 |
 |
FCPF250N65S3R0L |
650V,12A,250mΩ,N通道功率MOSFET |
2019-06-28 |
 |
 |
FCPF360N65S3R0L |
650V,10A,360mΩ,N通道功率MOSFET |
2019-06-28 |
 |
 |
FCPF600N65S3R0L |
650V,6A,600mΩ,N沟道功率MOSFET |
2019-06-28 |
 |
 |
FCU4300N80Z |
800V,1.6A,4.3Ω,N沟道SuperFET II MOSFET |
2019-06-28 |
 |
 |
FDA18N50 |
500V,19A,265mΩ,N沟道 UniFETTM MOSFET |
2019-06-28 |
 |
 |
FDA50N50 |
500V,48A,105mΩ,N沟道UniFETTM MOSFET |
2019-06-28 |
 |
 |
FDB1D7N10CL7 |
100V,268A,1.7mΩ,N沟道功率MOSFET |
2019-06-28 |
 |
 |
FDBL86066-F085 |
100V,240A,4.1mΩ,N沟道功率Trench MOSFET |
2019-06-28 |
 |
 |
FDBL86561-F085 |
60V,300A,1.1mΩ,N沟道功率Trench MOSFET |
2019-06-28 |
 |
 |
FDD4N60NZ |
600V,3.4A,2.5Ω,N沟道UniFETTM II MOSFET |
2019-06-28 |
 |
 |
FDD5612 |
60V,18A,55mΩ,N沟道PowerTrench MOSFET |
2019-06-28 |
 |
 |
FDD86581-F085 |
60V,25A,15mΩ,N沟道 PowerTrench MOSFET |
2019-06-28 |
 |
 |
FDD9409-F085 |
40V,90A,3.2mΩ,N沟道功率Trench MOSFET |
2019-06-28 |
 |
 |
FDMQ86530L |
60V,8A,17.5mΩ,N沟道功率Trench MOSFET |
2019-06-28 |
 |
 |
FDMS003N08C |
80V,147A,3.1mΩ,N沟道PowerTrench MOSFET |
2019-06-28 |
 |
 |
FDP4D5N10C |
100V,128A,4.5mΩ,N沟道功率Trench MOSFET |
2019-06-28 |
 |
 |
FDP8860 |
30V,80A,2.5mΩ,N沟道功率Trench MOSFET |
2019-06-28 |
 |
 |
FFSH15120ADN-F155 |
共阴极碳化硅(SiC)肖特基二极管,1200V,15A |
2019-06-14 |
 |
 |
AR0144ATSM20XUEA0-DPBR |
"AR0144ATSM20XUEA0-DPBR"CMOS图像传感器 |
2019-06-14 |
 |
 |
CAT34TS02VP2GT4C |
温度传感器,带EEPROM |
2019-06-14 |
 |
 |
FFSP15120A |
1200V,15A,碳化硅肖特基二极管 |
2019-06-14 |
 |
 |
FDD4243 |
44mΩ,-40V,-14A,P沟道PowerTrench MOSFET |
2019-06-14 |
 |
 |
FDD9510L-F085 |
13.5mΩ,-40V,-50A,P沟道功率Trench MOSFET |
2019-06-14 |
 |
 |
NTR3A052PZT1G |
47mΩ,-20V,-3.6A,P沟道功率MOSFET |
2019-06-14 |
 |
 |
NVATS5A106PLZT4G |
25mΩ,-40V,-33A,P沟道功率MOSFET |
2019-06-14 |
 |
 |
NVATS5A304PLZT4G |
6.5mΩ,-60V,-120A,P沟道功率MOSFET |
2019-06-14 |
 |
 |
NVMFS5113PLT1G |
14mΩ,?60V,-64A,P沟道功率MOSFET |
2019-06-14 |
 |
 |
NTLUS3A39PZTAG |
39mΩ,-20V,-5.2A,P沟道功率MOSFET |
2019-06-14 |
 |
 |
FQU11P06TU |
-60V,-9.4A,185mΩ,P沟道功率QFET MOSFET |
2019-06-14 |
 |
 |
NVATS5A112PLZT4G |
-60V,-27A,43mΩ,P沟道功率MOSFET |
2019-06-14 |
 |
 |
2V7002WT1G |
60V,340mA,1.6Ω,N沟道小信号MOSFET |
2019-06-14 |
 |
 |
ATP405-TL-H |
100V,40A,33mΩ,N沟道MOSFET |
2019-06-14 |
 |
 |
BVSS138LT1G |
50V,0.2A,3.5Ω,N沟道小信号MOSFET |
2019-06-14 |
 |
 |
FCD600N65S3R0 |
650V,6A,600mΩ,N沟道功率MOSFET |
2019-06-14 |
 |
 |
FCH040N65S3-F155 |
650V,65A,40mΩ,N沟道SuperFET III MOSFET |
2019-06-14 |
 |
 |
FCH041N60E |
600V,77A,41mΩ,N沟道SuperFET MOSFET |
2019-06-14 |
 |
 |
FCH072N60F |
600V,52A,72mΩ,N沟道功率FRFET MOSFET |
2019-06-14 |
 |
 |
FCH072N60F-F085 |
600V,52A,62mΩ,N沟道SuperFET II MOSFET |
2019-06-14 |
 |
 |
FCH125N65S3R0-F155 |
650V,24A,125mΩ,N沟道功率MOSFET |
2019-06-14 |
 |
 |
FCP067N65S3 |
650V,44A,67mΩ,N通道SUP III功率MOSFET |
2019-06-14 |
 |
 |
FCP260N65S3 |
650V,12A,260mΩ,N沟道功率MOSFET |
2019-06-14 |
 |
 |
FCP360N65S3R0 |
650V,10A,360mΩ,N沟道功率MOSFET |
2019-06-14 |
 |
 |
NCV809SN293D2T1G |
2.93V,超低电源电流电压监控器 |
2019-05-31 |
 |
 |
FAN7383MX |
625V,0.65/0.35A 灌电流/源电流,具有可变死区时间和关断?;さ陌肭攀秸ぜ?/td>
| 2019-05-16 |
 |
 |
SZMMSZ5260BT1G |
500mW,43V,±5%齐纳稳压管 |
2019-05-16 |
 |
 |
NRVTS8120EMFST1G |
120V,8A,非常低的漏电,肖特基肖特基整流器 |
2019-05-16 |
 |
 |
KSP42TA |
300V,500mA,NPN外延硅晶体管 |
2019-05-16 |
 |
 |
NVD5C684NLT4G |
60V,16.5mΩ,38A,单N沟道功率MOSFET |
2019-05-16 |
 |
 |
RHRP15120 |
1200V,15A,超高速二极管 |
2019-05-16 |
 |
 |
FFSH10120ADN-F155 |
共阴极碳化硅(SiC)肖特基二极管,1200V,10A |
2019-05-16 |
 |
 |
LC05132C01NMTTTG |
电池?;た刂破?集成MOSFET,1节锂离子电池 |
2019-05-16 |
 |
 |
LC709203FXE-05MH |
单节锂电池电量计[智能电量计] |
2019-05-16 |
 |
 |
KA5M0365RYDTU |
650V集成电源开关,用于35W离线反激式转换器 |
2019-05-16 |
 |
 |
NCP1076ABP100G |
用于稳健和高效电源的增强型离线开关稳压器 |
2019-05-16 |
 |
 |
NCP1076BAP130G |
用于稳健和高效电源的增强型离线开关稳压器 |
2019-05-16 |
 |
 |
NCP1076BBP065G |
用于稳健和高效电源的增强型离线开关稳压器 |
2019-05-16 |
 |
 |
NL17SG04P5T5G |
单逆变器,反相器 |
2019-03-28 |
 |
 |
LC823450XDTBG |
低功耗,高分辨率音频处理片上系统(SoC) |
2019-03-28 |
 |
 |
FUSB307BMPX |
USB Type-C端口控制器,含USB-PD |
2019-03-28 |
 |
 |
NCV7329D10R2G |
独立式LIN收发器 |
2019-03-28 |
 |
 |
NCV7428MWL5R2G |
具有集成LIN和稳压器的系统基础芯片 |
2019-03-28 |
 |
 |
LM2902VDG |
运算放大器,单电源供电,四路 |
2019-03-28 |
 |
 |
NCV2333DMR2G |
精密运算放大器,低功耗,零漂移,30μV偏移 |
2019-03-28 |
 |
 |
NCS333ASN2T1G |
具有10μV偏移的低功耗,零漂移运算放大器 |
2019-03-28 |
 |
 |
NCV20072DMR2G |
运算放大器,宽电源范围,3MHz |
2019-03-28 |
 |
 |
NCS2250SN2T1G |
50ns,高速低压,轨到轨,推挽式比较器 |
2019-03-28 |
 |
 |
NCS2252SQ2T2G |
50ns,高速低压,轨到轨,漏极开路比较器 |
2019-03-28 |
 |
 |
NCV2250SN2T1G |
50ns,高速低压,轨到轨,推挽式比较器 |
2019-03-28 |
 |
 |
NCV210RSQT2G |
电压输出,双向电流分流感应放大器 |
2019-03-28 |
 |
 |
NCV214RSQT2G |
电压输出,双向零漂移电流感应放大器 |
2019-03-28 |
 |
 |
NCP186BMX330TAG |
1A,带使能,快速瞬态响应,线性稳压器 |
2019-03-28 |
 |
 |
NCV317LBDG |
100mA,线性稳压器,可调输出 |
2019-03-28 |
 |
 |
NCP114ASN300T1G |
3.0V固定输出,300mA,CMOS LDO稳压器 |
2019-03-28 |
 |
 |
NCP134AMX110TCG |
具有偏置轨和极低压差的LDO稳压器 |
2019-03-28 |
 |
 |
NCP160AFCTC330T2G |
250mA,正固定输出LDO稳压器 |
2019-03-28 |
 |
 |
NCP186AMX120TAG |
1A,带使能,快速瞬态响应,LDO线性稳压器 |
2019-03-28 |
 |
 |
NCP186AMX295TAG |
1A,带使能,快速瞬态响应,LDO线性稳压器 |
2019-03-28 |
 |
 |
NCP702SN28T1G |
200mA,2.8V,低压差稳压器 |
2019-03-28 |
 |
 |
NCP717CMX285TBG |
300mA,2.85V,LDO线性电压稳压器 |
2019-03-28 |
 |
 |
NCP718ASN180T1G |
LDO稳压器,低Iq,宽输入电压,固定1.8V |
2019-03-28 |
 |
 |
NCV4263-2CD250R2G |
有使能复位的LDO稳压器 |
2019-03-28 |
 |
 |
NCV4269CD150R2G |
5V,带延迟,复位调节和检测输出LDO |
2019-03-28 |
 |
 |
NCV4269CPD50R2G |
LDO,5V,具有延迟,可调节复位和检测输出 |
2019-03-28 |
 |
 |
NCV47721PAAJR2G |
200mA输出电流的LDO稳压器 |
2019-03-28 |
 |
 |
NCV59748MWADJTBG |
1.5A,具有偏置导轨的超低压差稳压器 |
2019-03-28 |
 |
 |
NCV8161BMX180TBG |
1.8V,超低噪声和高PSRR LDO稳压器 |
2019-03-28 |
 |
 |
NCV8161BSN180T1G |
LDO稳压器,超低噪声和高PSRR,1.8V |
2019-03-28 |
 |
 |
NCV8163ASN330T1G |
LDO稳压器,超低噪声和高PSRR,3.3V |
2019-03-28 |
 |
 |
NCV8177AMTW180TCG |
1.8V,正固定输出线性稳压器 |
2019-03-28 |
 |
 |
NCV8177AMTW330TCG |
3.3V,正固定输出线性稳压器 |
2019-03-28 |
 |
 |
NCV8605MN18T2G |
1.8V,低压差稳压器带ESD?;?/td>
| 2019-03-28 |
 |
 |
NCV8664CDT33RKG |
3.3V,低压差稳压器,非常低Iq |
2019-03-28 |
 |
 |
NCV8705MWADJTCG |
可调节输出,超低Iq,超低噪声LDO稳压器 |
2019-03-28 |
 |
 |
NCV8718AMTADJTBG |
1.2V,低Iq宽输入电压,可调节LDO稳压器 |
2019-03-28 |
 |
 |
FAN49101AUC340X |
2A,1.8MHz,TinyPower I2C降压-升压调节器 |
2019-03-28 |
 |